Transistor testing fixture is intended for connecting of standard waveguides of measuring devices to the pads of GaAS field-effect transistor chips and for the analysis of low noise and low power transistor microwave parameters. Transistor testing fixture is performed on the base of two waveguide tapers (separated by the barrier) from rectangular waveguide to the gradient U- waveguide taper.
      Two wedge pieces of waveguide taper are isolated from frame by the dielectric insert for providing the bias to transistor electrodes. The contacting pads of transistor electrodes are galvanicaly connected with the wedge pieces of waveguide taper and the frame by microprobes made from beryllium bronze. The microprobe inductance is 0.2…0.3 nH. The transistor pad dimensions are not less 60x60 mkm.

      Transistor testing fixture is intended for connecting of standard waveguides of measuring devices to the pads of GaAS field-effect transistor chips and for the analysis of low noise and low power transistor microwave parameters. Transistor testing fixture is performed on the base of two waveguide tapers (separated by the barrier) from rectangular waveguide to the gradient U- waveguide taper.
      Two wedge pieces of waveguide taper are isolated from frame by the dielectric insert for providing the bias to transistor electrodes. The contacting pads of transistor electrodes are galvanicaly connected with the wedge pieces of waveguide taper and the frame by microprobes made from beryllium bronze. The microprobe inductance is 0.2…0.3 nH. The transistor pad dimensions are not less 60x60 mkm.