| Microwave diodes
|
 |
UZÀ103-3 ÊRUB.430201.002 ÒU
GaAs planar-epitaxial Shottky integral mixer diode pairs are intended for using in cm- and mm-wave frequency converter. It is manufactured in chips with beam leads |
 |
UÀÀ101-3 diodes ÊRUB.430201.001 TU
GaAs planar-epitaxial Shottky integral mixer-detector diodes are intended for using in cm-, mm-frequency converters and detectors. It is manufactured in chips with beam leads. ÊRUB.757631.005 are intended for using in cm-, mm- frequency multipliers ÊRUB.757631.005 |
 |
Primary termodiode current transdusers,
Converting the temperature of the object explored or environment in the electric signal - continuous current voltage |
 |
UÀÀ104-6, UÀÀ105-6, ÀÀGL.432.124.001
Converting the temperature of the object explored or environment in the electric signal - continuous current voltage ÊRUB.432131.001. Microwave varactor diode ÀÀGL.432.124.001 |
| Microwave transistors
|
 |
WAF 303 A, V low noise transistors
GaAs planar-epitaxial Shottky n-channel Low noise field-effect transistors in plastic package (analogue of SOT-23 package) are intended for using in HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 0.03…4 GHz frequency range |
|
WAF 302 low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect transistors in plastic package (analogue of SOT-23 package) are intended for using in HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 0.05…3 GHz frequency range |
 |
ÀP-354 À..Ä low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range |
 |
ÀP-355 À..D low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range |
|
ÀP-356 À..Å low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range |
 |
ÀP-357 À..D low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range |
 |
ÀP-358 À..D low noise transistors
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range |
 |
Average power transistors ÊRUB.420152.002 À..V
GaAs planar-epitaxial Shottky n-channel field-effect average power ÊRUB.420152.002 À,Â,V chip transistors are intended for using in sealed HIC of generators, converters and power amplifiers of 12…20 GHz frequency range |
 |
Average power transistors ÊRUB.420210.002 À..V
GaAs planar-epitaxial Schottky n-channel field-effect average power ÊRUB.420210.002 À,Â,V transistors attached to KT-51 flange are intended for using in sealed HIC of generators, converters and power amplifiers of 2…12 GHz frequency range |
 |
Average power transistors UÀÏ 605 À..V
GaAs planar-epitaxial Shottky n-channel field-effect average power UÀP 605 À,B,V transistors are placed in metal-ceramic package (analogue to 2S779 package) and intended for using in HIC of generators, converters and power amplifiers 8…12 GHz frequency range |
 |
Average power transistors U23.365.007
GaAs planar-epitaxial Schottky n-channel field-effect average power chip transistors (U23.365.007, U23.365.007-01, U23.365.007-02) are intended for using in sealed HIC of generators, converters and power amplifiers at 8…12 GHz frequency range |
|
Low noise transistors UÀP-354 À..D
GaAs planar-epitaxial Schottky n-channel field-effect low noise UÀP-354 À, UÀP-354 B, UÀP-354 UÀP-354 V, UÀP-354 G, UÀP-354 D transistors are placed in metal-ceramic package (analogue to 2S779 package) |
|
Low noise transistors UÀP-355 À..D
GaAs planar-epitaxial Schottky n-channel field-effect low noise UÀP-354 À, UÀP-354 B, UÀP-354 UÀP-354 V, UÀP-354 G, UÀP-354 D transistors are placed in metal-ceramic package (analogue to 2S779 package) |
|
Low noise transistors UÀP-356 À..D
GaAs planar-epitaxial Schottky n-channel field-effect low noise UÀP-354 À, UÀP-354 B, UÀP-354 UÀP-354 V, UÀP-354 G, UÀP-354 D transistors are placed in metal-ceramic package (analogue to 2S779 package) |
 |
Coupling and blocking capacitors
Coupling and blocking capacitors are intended for using as coupling and blocking elements in microwave HIC for the planar mounting |
| Amplification-conversion units
|
 |
LNRFE - 3515542050 receiver with input limiter
The receiver is intended for the amplification and conversion of weak signals into signals of intermediate frequency. The conversion is performed by balance (on 2nd) harmonic mixer. The receiver input is protected by input limiter controlled by TTL level signal (0 - direct losses, 1 - closed) (In warehouse 9pcs.) |
| Systems
|
 |
TV radiorelay stations local and mobile stations series "SATURN-T"
Series "Saturn-Ò8 to Saturn-Ò38" ÊRUB.464423.000...ÊRUB.464423.008. (In warehouse 5pcs.) |
 |
Radar level gauge RVR-102, RVR-102A
RVR-102, RVR-102A Radar level gauge is designed for measuring a level of liquid, pasty and some bulk/loose materials in storage tanks. Radar level measurement technology does not require the direct contact with working agent and because of this has the advantage of the operating in conditions where the traditional submersible and contact sensors are polluted subject to corrosion. (In warehouse 10pcs.) |
