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UZA103-3 DIODES
КRUB.430201.002 ТU
GaAs planar-epitaxial Shottky integral mixer diode pairs are intended for using in cm- and mm-wave frequency converter. It is manufactured in chips with beam leads.
| Diode type | Boundary frequency minimal,
THz | Diode capacitance at zero bias,
fF | Breakdown voltage, minimal,
V | Converting losses, maximal,
dB | Nonidentity of diode parameters
in pair,
%, no more | Chip dimensions (mm) and cheme
of diodes connection |
UZА103А-3
UZА103B-3
UZА103V-3
UZА103G-3 | 0,8
1,0
1,2
1,5 | 75..100
55..75
40..55
25..40 | 3.0
3.0
3.0
3.0
| 6.0
6.0
6.0
6.0
| 7.0
7.0
7.0
7.0
| 0,6x0,3x0,06
 |
Typical voltage-current characteristic
I - diode current
U - bias voltage
DATA FOR INFORMATION
| Converting losses, dB, no more |
6 (measured at 37.56 GHz, 2 mW and 100 W load) |
Nonidentity of diode parameters
relatively other diode in pair %, no more |
7 |
| Parasitic/construction capacitance fF, no more |
20 |
Maximal permissible continuos
dissipation microwave power at (25±10)°С
UZА103А-3
UZА103B-3
UZА103V-3
UZА103G-3 |
30 mW
20 mW
15 mW
10 mW |
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TM
