АP-357 А,B,V,G,D LOW NOISE TRANSISTORS

     GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 14…27 GHz frequency range.

1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer

All sizes in m.
Chip thickness: 120±30.
Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness

     The transistor mounting is performed by soldering or glue of back die side to scheme carrier and wire bonding. The soldering temperature - no more than 300°C, soldering time is no more than 3 sec. The connection is provided by the termocompression or ultrasonic bonding, heating temperature is no more than 300°C. The diameter of connection Au wire is 15…30 m.

• Drain-source constant voltage - 3,5 V;
• Gate-source constant voltage - 2.5 V;
• Dissipated power - 30 mW;
• Continued microwave power applied to transistor input - 15 mW.