AVERAGE POWER TRANSISTORS КRUB.420152.002 А,В,V

     GaAs planar-epitaxial Shottky n-channel field-effect average power КRUB.420152.002 А,В,V chip transistors are intended for using in sealed HIC of generators, converters and power amplifiers of 12…20 GHz frequency range.

1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer

Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness

     The transistor mounting is performed by soldering (under providing the condition of heat absorption) or gluing of back die side to scheme carrier and of the wire banding. The soldering temperature - no more than 300°C, soldering time - no more than 3 sec. The connection is provided by the thermocompression or ultrasonic bonding, heating temperature-no more than 300°C. The diameter of connection Au wire is 15…30 m.

• Drain-source constant voltage - 8.0 V;
• Gate-source constant voltage - 4.0 V;
• Dissipated power:
  - from minus 60°С up to plus 50 °С: 750 mW
  - from plus 50 °C up to plus 85 °C: linear decreased l from 750 mW at +50°C
     up to 400 mW at +85°C;
• Continued microwave power applied to transistor input - 250 mW.