AVERAGE POWER TRANSISTORS КRUB.420210.002 А,В,V

     GaAs planar-epitaxial Schottky n-channel field-effect average power КRUB.420210.002 А,В,V transistors attached to KT-51 flange are intended for using in sealed HIC of generators, converters and power amplifiers of 2…12 GHz frequency range.

     The transistor mounting into scheme - by mass soldering or by a soldering iron. The temperature of solder - not over 270 ⁰С, the soldering time - no more 4 sec. The recommended solder: POS-61(ПОС-61); the recommended flux compounds: 10-40% of rosin and 90-60% of isopropyl or ethyl alcohol.
     The distance from package to tinning or soldering place of leads is no less 1 mm.
     It is permitted the cutting and bonding of transistor leads in the process of mounting. The spacing between the package and the start of bending - no more 1 mm; the bending radius - no less 0,5 mm, the distance from the package - no less 2 mm under the cutting process. The forming and the cutting should be done without transmission of the force to output place of the lead-out of package.

• Drain-source constant voltage - 8.0 V;
• Gate-source constant voltage - 4.0 V;
• Dissipated power:
  - from minus 60°С up to plus 50 °С: 1.5 W
  - from plus 50 °C up to plus 85 °C: linear decreased l from 1.5 W at +50°C
     up to 0.8 W at +85°C;
• Continued microwave power applied to transistor input - 250 mW.