UАP 605 А,B,V AVERAGE POWER TRANSISTORS

     The level of noise transistor parameters enables to use them in amplifying scheme with increased requirements to input signal dynamic range. It should be taken into account that the dissipation of heat flow beyond the package is occurred by source leads-out in the design process.
     The transistor mounting in scheme - by mass soldering or by a soldering iron. The temperature of solder - not over 270 °С, the soldering time - no more 4 sec. The recommended solder: POS-61; the recommended flux compounds: 10-40% of rosin and 90-60% of isopropyl or ethyl alcohol.
     The distance from package to tinning or soldering place of leads is no less 1 mm.
     It is permitted the cutting and bonding of transistor leads in the process of mounting. The spacing between the package and the start of bending - no more 1 mm; the bending radius - no less 0,5 mm, the distance from the package - no less 2 mm under the cutting process. The forming and the cutting should be done without transmission of the force to output place of the lead-out of package.

• Drain-source constant voltage - 7.0 V;
• Gate-source constant voltage - 3.5 V;
• Dissipated power:
  - from minus 60°С up to plus 50 °С: 450 mW
  - from plus 50 °C up to plus 85 °C: linear decreased l from 450 mW at +50°C
     up to 250 mW at +85°C;
• Continued microwave power applied to transistor input - 100 mW.