AVERAGE POWER TRANSISTORS U23.365.007

     GaAs planar-epitaxial Schottky n-channel field-effect average power chip transistors (U23.365.007, U23.365.007-01, U23.365.007-02) are intended for using in sealed HIC of generators, converters and power amplifiers at 8…12 GHz frequency range.

1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer

Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness

     The transistor mounting is performed by soldering or gluing (under providing the condition of heat abstraction) of back die side to scheme carrier and the wire bonding. The soldering temperature - no more than 300°C, soldering time - no more than 3 sec. The connection is provided by the thermocompression or ultrasonic bonding; heating temperature-no more than 300°C. The diameter of connection Au wire is 15…30m.

• Drain-source constant voltage - 7.0 V;
• Gate-source constant voltage - 3.5 V;
• Dissipated power:
  - from minus 60°С up to plus 50 °С: 400 mW
  - from plus 50 °C up to plus 85 °C: linear decreased l from 400 mW at +50°C
     up to 250 mW at +85°C;
• Continued microwave power applied to transistor input - 100 mW.
  with heat sink