UАP-356 А,B,V,G,D LOW NOISE TRANSISTORS

     GaAs planar-epitaxial Shottky n-channel field-effect low noise UАP-356 А, UАP-356 B, UАP-356 V, UАP-356 G, UАP-356 D transistors assemblied in metal-ceramic package (analogue to 2S779 package) are intended for using in sealed HIC of amplifiers and amplifying-converting units of the terrestial and space communication, TV, radioastronomic and radiometric systems of 8…12 GHz frequency range.
     The electrical transistor mounting in circuit is performed by the mass soldering or by the soldering iron. The temperature of solder - no more 270°С, soldering time - no more 4 sec. The recommended solder - POS-61(ПОС-61), the recommended flux compounds - 10-40% of rosin and 90-60% of isopropyl or ethyl alcohol.
     The distance from package to tinning or soldering place of leads is no less 1mm.
     It is permitted the cutting and bonding of transistor leads in the process of mounting. The spacing between the package and the start of bending -no more 1mm, the bending radius - no less 0,5mm; the distance from package - no less 2mm under the cutting process. The forming and cutting should be done without transmission of the force to output place of the lead - out of package.

• Drain-source constant voltage - 3.5 V;
• Gate-source constant voltage - 2.5 V;
• Dissipated power: - 150 mW
• Continued microwave power applied to transistor input - 100 mW.