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UАА101-3
КRUB.430201.001 ТУ

     GaAs planar-epitaxial Shottky integral mixer-detector diodes are intended for using in cm-, mm- frequency converters and detectors. It is manufactured in chips with beam leads.

SPECIFICATION
Diode typeBoundary frequency minimal, THzDiode capacitance at zero bias, fFIdeality index of voltage-current characteristics, no moreBreakdown voltage, minimal, VConverting losses, maximal,dBCurrent sensivity, no less,
A/W
Chip dimensions (mm) and cheme of diodes connection
UАА101А-3 UАА101B-3 UАА101V-3 UАА101G-30,8
1,0
1,2
1,5
75...100 55...75 40...55 28...40 1,23,0
3,0
3,0
3,0
6,0
6,0
6,0
6,0
5,0
5,0
5,0
5,0
0,45x0,14x0,06

УАА101-3 вольтамперная характеристика





  Типовая вольтамперная характеристика
  I - ток диода
  U - напряжение смещения












DATA FOR INFORMATION
Converting losses, dB, no more6 (measured at 37.56 Hz, 2mW and 100? load)
Parasitic/construction capacitance, fF, no more20
Maximal permissible continuos dissipation
microwave power at (25±10)°С, mW
UАА101А-3
UАА101B-3
UАА101V-3
UАА101G-3


30
20
15
10

     GaAs SHOTTKY MULTIPLYING DIODES
КRUB.757631.005

     PURPOSE:
      КRUB.757631.005 are intended for using in cm-, mm- frequency multipliers. КRUB.757631.005 for microwave frequency tuning.


     DESIGN:
      Unpacked with beam leads. Material of leads - Au, thickness - 5 µ.

SPECIFICATION
Diode typeKRUB.757631.005КRUB.757631.005-01
General diode capacitance at zero bias, fF60...70400...500
Diode capacitance with bias voltage "-" 6V, fF30…36140…130
Stray capacitance, fF2020
Series resistance of the losses, Оhm53
Boundary frequency with bias voltage"-"6V, GGzmore or equal 1500more or equal 500
Breaking-down voltage at a current level 10 mkА, Vmore 10more 10
Engagement factor
of the barrier capacitance within the limits of from 0 V to "-"6 V
more or equal 3,0more or equal 3,0
Dimensions, мм0,45х0,14х0,060,45х0,14х0,06

     вольтамперная характеристика





  Typical voltage-current characteristic
  I - - diode current
  U - bias voltage












вольтамперная характеристика





  Typical voltage-farad characteristic
  Cj(0) - conversion capacitance at zero bias
  Cj - conversion capacitance
Ur - voltage applied to the switch over in the backward direction











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