UАА104-6, UАА105-6 DIODES
KRUB.432131.001 ТУ (КРЮБ.432131.001 ТУ)
GaAs planar-epitaxial Shottky mixer-detector
diodes are intended for using in cm- and mm-frequency converters and detectors. Diodes
are manufactured on chip-carrier.
| Diode type | Diode
capacitance
at zero bias,
fF | Series resistor of losses, no more,
Ohm | Ideality index
of V-C
characteristics,
no more | Convertion
losses, no
more,
dB | Current
sensitivity,
no less,
A/W,
А/Вт | Breakdown
voltage, no
less, V | Chip-carrier
dimensions,
mm |
UАА104А-6
UАА104B-6
UАА104V-6
UАА104G-6
UАА104D-6
UАА104E-6
UАА104ZH-6
UАА104I-6
|
220-260
190-220
160-190
145-160
125-145
105-125
95-105
85-95
|
3,5
4,5
5
6
7
8
9
10
|
1.2 |
7,0
6,5
6,0
5,8
5,6
5,4
5,2
5,0
|
5 |
5 |
2х1х1 |
UАА105A-6
UАА105B-6
UАА105V-6
UАА105G-6
UАА105D-6
UАА105E-6
UАА105ZH-6
UАА105I-6
|
270-310
240-270
210-240
195-210
175-195
155-175
145-155
135-145
|
3,5
4,5
5
6
7
8
9
10
|
1,2 |
7,5
7,0
6,5
6,2
6,0
5,8
5,6
5,4
|
5 |
5 |
3,5х1,6х1,6 |
MICROWAVE VARACTOR DIODE
AAGL432.124.001 (ААГЛ.432.124.001)
GaAs planar-epitaxial diode is intended for using
in parametric amplifiers, multipliers of microwave and extremely high frequency ranges or
for adjusting of oscillating loops.
SPECIFICATION
| Diodes | Y АВ101АЭ-1 | Y AB101АЭ-1 |
| Total capacitance at -6 V bias voltage, pF | 1,4 - 2,2 | 0,6 - 0,8 |
| Scaling factor at 0-15 V | 7,4 - 10,2 | 6,5 - 9,8 |
| Q-factor, more than | 80 | 80 |
| Breakdown voltage, V | 15 - 30 | 15 - 30 |
| Operating temperature range, °С | -60...+85 | -60...+85 |
| Dimensions, mm | 2х1х1 | 2х1х1 |
|
TM
