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WAF 302 LOW NOISE TRANSISTORS
GaAs planar-epitaxial Shottky n-channel low noise field-effect transistors in plastic package (analogue of SOT-23 package) are intended for using in HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 0.05…3 GHz frequency range.
The transistor package is suitable for mounting in scheme by the mass flow soldering, dip soldering or the soldering iron. The temperature of solder - not over 270°C, the soldering time - no more 4 sec.
Don't permitted the cutting, the bonding and unbonding of transistor lead-outs.
BOUNDARY ELECTRICAL PARAMETER VALUES IN OPERATING
TEMPERATURE RANGE FROM MINUS 60°С UP TO PLUS 85°С
- Drain-source constant voltage - 3.5 V;
- Gate-source constant voltage - 2.5 V;
- Dissipated power - 70 mW;
- Continued microwave power applied to transistor input - 100 mW.
MAIN ELECTRICAL PARAMETERS AT TAMBIENT= (25±10)°С
| Parameters, measuring regime, measuring units | Designation | no less | no more |
| Initial drain current (Uds =1,5 V; Uqs = 0), mА | Іdinit | 50 | 150 |
| Cutoff voltage (Uds = 2,0 V; Id = 0,1 mА ), V | Udscutoff | -2,5 | -0,8 |
| Transconductance (Uds = 2,0 V; Id = 25 mА), mS | S | 60 | |
| Reverse gate current (Uds = 2,0 V; Id = 25 mА), mА | Iз обр | | 0,1 |
Minimal noise factor
(f=1,0 GHz; Uds=2 V; Id=25 mА) , dB | КN min | | 1,3 |
Power gain
(f=1,0 GHz; Uds=2 B; Id=25 mA) , dB | Кр | 13 | |
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