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АP-354 А,B,V,G,D LOW NOISE TRANSISTORS
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 1…8 GHz frequency range.
1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer
All sizes in m.
Chip thickness: 120±30.
Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness
The transistor mounting is performed by the soldering or qlue of back die side to scheme carrier and by wire bonding. The soldering temperature - no more than 300°C, soldering time is no more than 3 sec.
The connection is provided by the termocompression or ultrasonic bonding, heating temperature is no more than 300°C. The diameter of connection Au wire is 15…30m.
BOUNDARY ELECTRICAL PARAMETER VALUES IN OPERATING
TEMPERATURE RANGE FROM MINUS 60°С UP TO PLUS 85°С
- Drain-source constant voltage - 3.5 V;
- Gate-source constant voltage - 2.5 V;
- Dissipated power - 100 mW;
- Continued microwave power applied to transistor input - 50 mW.
MAIN ELECTRICAL PARAMETERS AT TAMBIENT= (25±10)°С
Parameters
measuring regime, measuring units | Designation | АP-354А...D |
| no less | no more |
| Initial drain current (Uds =2.0 V; Uqs = 0), mА | Іdinit | 20 | 80 |
| Cutoff voltage (Uds = 2.0 V; Id = 0.1 mА ), V | Udscutoff | -2,5 | -0,6 |
| Transconductance (Uds = 2.0 V; Id = 15…22 mА), mS | S | 45 | |
| Reverse gate current (Uds = 2.0 V; Ugs=-1,5V), mА | Iq reverse | | 0,3 |
Parameters
Diode type | Min. Noise factor КNmin, no more,
dB | Power gain Кp, no less,
dB |
| Measuring regime: f=3,5 GHz; Uds=2 V; Id=15...22 mA |
АP-354 А | 1,0 | 13 |
| АP-354 B | 0,8 | 13 |
| АP-354 V | 0,6 | 13 |
| АP-354 G | 0,5 | 13 |
| АP-354 D | 0,4 | 14 |
TYPICAL VALUE OF TRANSISTOR S-PARAMETERS IN ELECTRICAL REGIME WHICH
CORRESPONDS TO MINIMAL NOISE FACTOR
| f.GHz | S11 | S12 | S21 | S22 |
| Module | Phase, grad | Module | Phase, grad | Module | Phase, grad | Module | Phase, grad |
1.00000
1.50000
2.00000
2.50000
3.00000
3.50000
4.00000
4.50000
5.00000
5.50000
6.00000
6.50000
7.00000
7.50000
8.00000 |
0.99257
0.98383
0.97250
0.95929
0.94492
0.93002
0.91511
0.90060
0.88675
0.87374
0.86166
0.85054
0.84037
0.83112
0.82272 |
-17.71240
-26.31815
-34.64482
-42.62963
-50.22888
-57.41856
-64.18860
-70.54187
-76.49052
-82.05260
-87.25007
-92.10729
-96.64838
-100.89840
-104.88063 |
0.02001
0.02943
0.03821
0.04624
0.05345
0.05983
0.06541
0.07024
0.07436
0.07787
0.08081
0.08326
0.08528
0.08691
0.08821 |
77.89803
72.03487
66.37865
60.97309
55.84635
51.01159
46.47108
42.21798
38.23923
34.51867
31.03804
27.77854
24.72225
21.85164
19.15072 |
3.79718
3.72500
3.63024
3.51792
3.39321
3.26083
3.12484
2.98848
2.85422
2.72378
2.59833
2.47857
2.36488
2.25734
2.15592
|
166.75452
160.32001
154.09227
148.11502
142.41634
137.00932
131.89622
127.07010
122.51787
118.22326
114.16798
110.33315
106.70074
103.25316
99.97433 |
0.60538
0.60151
0.59661
0.59109
0.58537
0.57979
0.57465
0.57016
0.56646
0.56361
0.56165
0.56055
0.56029
0.56081
0.56205
|
-11.36670
-16.88152
-22.21048
-27.31547
-32.17286
-36.77194
-41.11266
-45.20253
-49.05404
-52.68261
-56.10476
-59.33698
-62.39520
-65.29433
-68.04781 |
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