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АP-355 А,B,V,G,D LOW NOISE TRANSISTORS
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 6…10 GHz frequency range.
1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer
All sizes in m.
Chip thickness: 120±30.
Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness
The transistor mounting is performed by soldering or glue of back die side to scheme carrier and wire bonding. The soldering temperature - no more than 300°C, soldering time is no more than 3 sec.
The connection is provided by the termocompression or ultrasonic bonding, heating temperature is no more than 300°C. The diameter of connection Au wire is 15…30 m.
BOUNDARY ELECTRICAL PARAMETER VALUES IN OPERATING
TEMPERATURE RANGE FROM MINUS 60°С UP TO PLUS 85°С
- Drain-source constant voltage - 3.5 V;
- Gate-source constant voltage - 2.5 V;
- Dissipated power - 70 mW;
- Continued microwave power applied to transistor input - 50 mW.
MAIN ELECTRICAL PARAMETERS AT TAMBIENT= (25±10)°С
Parameters
measuring regime, measuring units | Designation | АP-355А...D |
| no less | no more |
| Initial drain current (Uds =2.0 V; Uqs = 0), mА | Іd init | 15 | 70 |
| Cutoff voltage (Uds = 2.0 V; Id = 0.1 mА ), V | Uds cutoff | -2,5 | -0,6 |
| Transconductance (Uds = 2.0 V; Id = 10…15 mА), mS | S | 32 | |
| Reverse gate current (Uds = 2.0 V; Ugs=-1,5V), mА | Iq reverse | | 0,3 |
Parameters
Diode type | Min. Noise factor КNmin, no more,
dB | Power gain Кp, no less,
dB |
| Measuring regime: f =8 GHz; Uds=2 V; Id=10...15 mA |
| АP-355 А | 1,55 | 10 |
| АP-355 B | 1,3 | 10 |
| АP-355 V | 1,0 | 10 |
| АP-355 G | 0,8 | 11 |
| АP-355 D | 0,7 | 11 |
TYPICAL VALUE OF TRANSISTOR S-PARAMETERS IN ELECTRICAL REGIME WHICH
CORRESPONDS TO MINIMAL NOISE FACTOR
| f,GHz | S11 | S12 | S21 | S22 |
| Module | Phase, grad | Module | Phase, grad | Module | Phase, grad | Module | Phase, grad |
6.00000
6.25000
6.50000
6.75000
7.00000
7.25000
7.50000
7.75000
8.00000
8.25000
8.50000
8.75000
9.00000
9.25000
9.50000
9.75000
10.00000
|
0.90486
0.89941
0.89402
0.88871
0.88349
0.87836
0.87334
0.86842
0.86361
0.85892
0.85434
0.84989
0.84556
0.84134
0.83725
0.83328
0.82942
|
-63.62152
-65.76923
-67.87185
-69.93000
-71.94447
-73.91583
-75.84431
-77.73101
-79.57687
-81.38236
-83.14861
-84.87636
-86.56665
-88.22031
-89.83803
-91.42095
-92.97005
|
0.07434
0.07620
0.07795
0.07962
0.08119
0.08268
0.08408
0.08539
0.08663
0.08779
0.08888
0.08990
0.09085
0.09174
0.09257
0.09334
0.09405
|
44.49112
42.97729
41.49661
40.04838
38.63195
37.24678
35.89237
34.56802
33.27287
32.00649
30.76794
29.55658
28.37166
27.21250
26.07850
24.96885
23.88290
|
2.49191
2.45393
2.41603
2.37828
2.34076
2.30352
2.26662
2,23010
2.19400
2.15835
2.12319
2.08854
2.05442
2.02084
1.98782
1.95538
1.92350
|
128.40698
126.63992
124.90601
123.20461
121.53503
119.89672
118.28921
116.71178
115.16359
113.64417
112.15262
110.68827
109.25040
107.83832
106.45142
105.08887
103.75005
|
0.64493
0.64295
0.64105
0.63924
0.63752
0.63590
0.63437
0.63294
0.63162
0.63039
0.62927
0.62825
0.62733
0.62651
0.62579
0.62516
0,62463
|
-41.65232
-43.07480
-44.47086
-45.84100
-47.18571
-48.50553
-49.80107
-51.07286
-52.32146
-53.54751
-54.75154
-55.93422
-57.09603
-58.23755
-59.35941
-60.46206
-61.54609
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TM
