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АP-356 А,B,V,G,D,E LOW NOISE TRANSISTORS
GaAs planar-epitaxial Shottky n-channel low noise field-effect chip transistors are intended for using in sealed HIC of amplifying and amplifying-converting devices of the terrestrial and space communication systems of 8…16 GHz frequency range.
1 - drain bounding pad
2 - source bounding pad
3 - gate bounding pad
4 - shielding coating of active area: AD- 9103 lacquer
All sizes in m.
Chip thickness: 120±30.
Material of bonding pads - anodic
aurum (999,9) of 1.5m thickness
The transistor mounting is performed by soldering or glue of back die side to scheme carrier and wire bonding. The soldering temperature - no more than 300°C, soldering time is no more than 3 sec.
The connection is provided by the termocompression or ultrasonic bonding, heating temperature is no more than 300°C. The diameter of connection Au wire is 15…30 m.
BOUNDARY ELECTRICAL PARAMETER VALUES IN OPERATING
TEMPERATURE RANGE FROM MINUS 60°С UP TO PLUS 85°С
- Drain-source constant voltage - 3,5 V;
- Gate-source constant voltage - 2.5 V;
- Dissipated power - 45 mW;
- Continued microwave power applied to transistor input - 50 mW.
MAIN ELECTRICAL PARAMETERS AT TAMBIENT= (25±10)°С
Parameters
measuring regime, measuring units | Designation | АP-356А...Е |
| no less | no more |
| Initial drain current (Uds =2,0 V; Uqs = 0), mА | Іdinit | 10 | 55 |
| Cutoff voltage (Uds = 2,0 V; Id = 0,1 mА ), V | Udscutoff | -2,5 | -0,6 |
| Transconductance (Uds = 2,0 V; Id = 8…12 mА), mS | S | 25 | |
| Reverse gate current (Uds = 2,0 V; Uqs =-1,5V), mА | Iq reverse | | 0,3 |
Parameters
Diode type | Min. Noise factor КNmin, no more,
dB | Power gain Кp, no less,
dB |
| Measuring regime: f=12 GHz; Uds=2.5 V; Id=8...12 mA |
| АP-356 А | 2,04 | 7,5 |
| АP-356 B | 1,76 | 7,5 |
| АP-356 V | 1,46 | 8,0 |
| АP-356 G | 1.3 | 8,5 |
| АP-356 D | 1,15 | 9,0 |
| АP-356 E | 1,0 | 9,5 |
TYPICAL VALUE OF TRANSISTOR S-PARAMETERS IN ELECTRICAL REGIME WHICH
CORRESPONDS TO MINIMAL NOISE FACTOR
| f,GHz | S11 | S12 | S21 | S22 |
| Module | Phase, grad | Module | Phase, grad | Module | Phase, grad | Module | Phase, grad |
8.00000
8.50000
9.00000
9.50000
10.00000
10.50000
11.00000
11.50000
12.00000
12.50000
13.00000
13.50000
14.00000
14.50000
15.00000
15.50000
16.00000
|
0.89451
0.88582
0.87735
0.86913
0.86119
0.85355
0.84620
0.83916
0.83243
0.82601
0.81989
0.81406
0.80851
0.80324
0.79823
0.79348
0.78896
|
-65.31204
-68.50410
-71.58308
-74.55213
-77.41473
-80.17374
-82.83284
-85.39542
-87.86536
-90.24604
-92.54137
-94.75486
-96.89002
-98.95023
-100.93891
-102.85943
-104.71465
|
0.09740
0.10086
0.10403
0.10694
0.10959
0.11201
0.11421
0.11620
0.11800
0.11961
0.12106
0.12236
0.12351
0.12452
0.12541
0.12619
0.12686
|
44.27580
42.08368
39.97249
37.93919
35.98091
34.09490
32.27831
30.52813
28.84128
27.21540
25.64717
24.13419
22.67401
21.26390
19.90168
18.58512
17.31212
|
1.79122
1.74801
1.70525
1.66309
1.62167
1.58110
1.54144
1.50277
1.46513
1.42855
1.39303
1.35859
1.32521
1.29289
1.26162
1.23137
1.20212
|
125.15440
122.39732
119.72208
117.12569
114.60531
112.15823
109.78167
107.47264
105.22812
103.04576
100.92232
98.85541
96.84261
94.88126
92.96920
91.10422
89.28424
|
0.68383
0.67908
0.67452
0.67019
0.66610
0.66225
0.65864
0.65529
0.65218
0.64931
0.64668
0.64428
0.64210
0.64014
0.63837
0.63680
0.63542
|
-37.03772
-38.90901
-40.73060
-42.50470
-44.23353
-45.91937
-47.56440
-49.17071
-50.74030
-52.27506
-53.77672
-55.24691
-56.68716
-58.09882
-59.48319
-60.84138
-62.17453
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TM
